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1

Generation of dislocations in annealed silicon wafers under applied stress

M. V. Mezhennyi, M. G. Milvidskii, V. Ya. Reznik, R. J. Falster

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 207 KB

english, 2005

2

Dynamic properties of dislocations in silicon wafers heat-treated at low temperatures

M. V. Mezhennyi, M. G. Mil’vidskii, V. F. Pavlov, V. Ya. Reznik

Journal:

Physics of the Solid State

Year:

2001

Language:

english

File:

PDF, 149 KB

english, 2001

3

Specific features in the generation and motion of dislocations in silicon single crystals doped with nitrogen

M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik

Journal:

Physics of the Solid State

Year:

2002

Language:

english

File:

PDF, 69 KB

english, 2002

4

Specific features in the generation and motion of dislocations in heat-treated silicon wafers

M. V. Mezhennyi, M. G. Mil’vidskii, V. F. Pavlov, V. Ya. Reznik

Journal:

Physics of the Solid State

Year:

2002

Language:

english

File:

PDF, 531 KB

english, 2002

5

Diffuse x-ray scattering study of the formation of microdefects in heat-treated dislocation-free large-diameter silicon wafers

V. T. Bublik, S. Yu. Matsnev, K. D. Shcherbachev, M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik

Journal:

Physics of the Solid State

Year:

2003

Language:

english

File:

PDF, 138 KB

english, 2003

6

Theoretical and experimental study of the formation of grown-in and as-grown microdefects in dislocation-free silicon single crystals grown by the Czochralski method

N. A. Verezub, A. I. Prostomolotov, M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik

Journal:

Crystallography Reports

Year:

2005

Language:

english

File:

PDF, 336 KB

english, 2005

7

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

A. V. Govorkov, A. Ya. Polyakov, T. G. Yugova, N. B. Smirnov, E. A. Petrova, M. V. Mezhennyi, A. V. Markov, I. -H. Lee, S. J. Pearton

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Year:

2007

Language:

english

File:

PDF, 329 KB

english, 2007

8

Dislocation generation in heat-treated nitrogen-doped silicon wafers when applying external loads

M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Year:

2009

Language:

english

File:

PDF, 273 KB

english, 2009

9

Internal-getter formation in nitrogen-doped dislocation-free silicon wafers

M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik

Journal:

Russian Microelectronics

Year:

2011

Language:

english

File:

PDF, 1.94 MB

english, 2011

10

Experimental and theoretical investigation of formation of the oxygen-containing precipitate-dislocation loop system in silicon

R. V. Goldstein, M. V. Mezhennyi, M. G. Mil’vidskii, V. Ya. Reznik, K. B. Ustinov, P. S. Shushpannikov

Journal:

Physics of the Solid State

Year:

2011

Language:

english

File:

PDF, 606 KB

english, 2011

11

Evaluating intrinsic deformations in oxygen-containing precipitates

R. V. Goldstein, K. B. Ustinov, P. S. Shushpannikov, M. V. Mezhennyi, M. G. Mil’vidskiĭ, V. Ya. Reznik

Journal:

Technical Physics Letters

Year:

2008

Language:

english

File:

PDF, 243 KB

english, 2008

12

Generation and motion of dislocations in silicon wafers subjected to multi-step annealing

Mezhennyi, M V, Mil vidskii, M G, Reznik, V Ya, Falster, R J

Journal:

Journal of Physics Condensed Matter

Year:

2002

Language:

english

File:

PDF, 215 KB

english, 2002

13

Aging of chromium-nickel austenitic-ferritic steels alloyed with molybdenum, copper, and titanium

Yu. O. Mezhennyi, Ya. M. Potak, O. K. Revyakina, Yu. A. Skakov

Journal:

Metal Science and Heat Treatment

Year:

1968

Language:

english

File:

PDF, 417 KB

english, 1968

14

Mechanism for feeding tubes into the reeling machines

M. G. Berdyanskii, I. I. Brodskii, B. M. Belousov, G. Ya. Mezhennyi

Journal:

Year:

1966

Language:

english

File:

PDF, 273 KB

english, 1966

15

Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulk

Vasilév, Yu. B., Verezub, N. A., Mezhennyi, M. V., Prosolovich, V. S., Prostomolotov, A. I., Reznik, V. Ya.

Journal:

Russian Microelectronics

Year:

2013

Language:

english

File:

PDF, 1.80 MB

english, 2013